| Mfg Part Number: PLDC20RA10-35DMB | Alternate P/N: PLDC20RA1035DMB |
| NSN : 5962-01-373-5795 | NIIN : 013735795 |
| CAGE Code : 65786 | Manufacturer: Cypress Semiconductor |
| Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
Alongside NSN 5962-01-373-5795 we have countless other items from Cypress Semiconductor and other leading manufacturers that are readily available for purchase. Nascent Aero lists parts alongside applicable CAGE Codes for the benefit of your search process, such as this particular NSN part PLDC20RA10-35DMB being produced under the CAGE Code 65786. As our team members are always available for customers at all times, we guarantee responses to completed quote requests within 15 minutes of submission. Additionally, our team members can walk you through the purchasing process with person-to-person communication every step of the way, ensuring that all your needs are thoroughly and efficiently met. If you have any questions or concerns regarding our offerings and wish to speak with a representative, give us a call or email at any time; we are available 24/7x365.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-373-5795 Item Description: MICROCIRCUIT,MEMORY | 5962 | 013735795 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 5962-90555 | 5 | 1 | 4 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | F16AIRCOMBFIT E/I FSCM 81755" |
| CBBL | FEATURES PROVIDED | ASYNCHRONOUS AND MONOLITHIC AND PROGRAMMABLE" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 20 INPUT" |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | -16.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,MEMORY,DIGITAL,CMOS,ONE TIME PROGRAMMABLE,ASYNCHRONOUS,PALD,MONOLITHIC SILICON" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED" |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS NOMINAL ACCESS" |
| CZER | MEMORY DEVICE TYPE | PAL" |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC" |
| FEAT | SPECIAL FEATURES | ONE TIME ASYNCHRONOUS PROGRAMMABLE" |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI" |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT" |
| ZZZK | SPECIFICATION/STANDARD DATA | 67268-5962-90555 GOVERNMENT STANDARD" |
| ZZZT | NONDEFINITIVE SPEC/STD DATA | 01 TYPE AND L CASE AND A FINISH" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | F16AIRCOMBFIT E/I FSCM 81755" |
| CBBL | FEATURES PROVIDED | ASYNCHRONOUS AND MONOLITHIC AND PROGRAMMABLE" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 20 INPUT" |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | -16.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,MEMORY,DIGITAL,CMOS,ONE TIME PROGRAMMABLE,ASYNCHRONOUS,PALD,MONOLITHIC SILICON" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED" |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS NOMINAL ACCESS" |
| CZER | MEMORY DEVICE TYPE | PAL" |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC" |
| FEAT | SPECIAL FEATURES | ONE TIME ASYNCHRONOUS PROGRAMMABLE" |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI" |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT" |
| ZZZK | SPECIFICATION/STANDARD DATA | 67268-5962-90555 GOVERNMENT STANDARD" |
| ZZZT | NONDEFINITIVE SPEC/STD DATA | 01 TYPE AND L CASE AND A FINISH" |
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